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| CYStech Electronics Corp. PNP Epitaxial Planar Transistor Spec. No. : C655M3 Issued Date : 2004.03.18 Revised Date :2005.03.11 Page No. : 1/4 BTB1580M3 Description The BTB1580M3 is a PNP Darlington transistor, designed for use in general purpose amplifier and low speed switching application. Equivalent Circuit BTB1580M3 C B 8k 60 Outline SOT-89 E BBase CCollector EEmitter BCE Absolute Maximum Ratings (Ta=25C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Symbol VCBO VCEO VEBO IC ICP Pd Limits -100 -100 -5 -4 -6 (Note 1) 0.6 1 (Note 2) 2 (Note 3) 208 125 (Note 2) 62.5 (Note 3) 150 -55~+150 Unit V V V A A W W W C/W C/W C/W C C Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature RJA Tj Tstg Note : 1. Single Pulse Pw350s, Duty2%. 2. When mounted on a FR-4 PCB with area measuring 10x10x1 mm. 3. When mounted on a ceramic board with area measuring 40x40x1mm. BTB1580M3 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25C) Symbol BVCEO BVCBO ICBO ICEO IEBO *VCE(sat) *VBE(on) *hFE1 *hFE2 Cob Min. -100 -100 1000 500 Typ. Max. -1 -2 -2 -1.2 -2.8 200 Unit V V mA mA mA V V pF Spec. No. : C655M3 Issued Date : 2004.03.18 Revised Date :2005.03.11 Page No. : 2/4 Test Conditions IC=-1mA, IB=0 IC=-100A, IE=0 VCB=-100V, IE=0 VCE=-50V, IB=0 VEB=-5V, IC=0 IC=-2A, IB=-2mA VCE=-4V, IC=-2A VCE=-4V, IC=-1A VCE=-4V, IC=-2A VCB=-10V, IE=0A, f=1MHz *Pulse Test : Pulse Width 380s, Duty Cycle2% BTB1580M3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Current Gain vs Collector Current 10000 Spec. No. : C655M3 Issued Date : 2004.03.18 Revised Date :2005.03.11 Page No. : 3/4 Saturation Voltage vs Collector Current 10000 Saturation Voltage---(mV) VCE = 4V VCE (SAT)@IC=250IB Current Gain---HFE 1000 100 1000 10 1 1 10 100 1000 10000 100 1 10 100 1000 10000 Collector Current---IC(mA) Collector Current---IC(mA) Saturation Voltage vs Collector Current 10000 Saturation Voltage---(mV) VBE (SAT)@IC = 250IB 1000 On voltage---(mV) 10000 On voltage vs Collector Current VBE (ON) @VCE = 4V 1000 100 10 1 10 100 1000 10000 Collector Current---IC(mA) 100 1 10 100 1000 10000 Collector Current---IC(mA) Power Derating Curves 2.5 Power Dissipation---PD(W) 2 1.5 1 0.5 0 0 50 100 150 200 Ambient Temperature---TA() See Note 3 on page 1 See Note 2 on page 1 BTB1580M3 CYStek Product Specification CYStech Electronics Corp. SOT-89 Dimension Marking: Spec. No. : C655M3 Issued Date : 2004.03.18 Revised Date :2005.03.11 Page No. : 4/4 A 1 2 C 3 H BN B D Style: Pin 1. Base 2. Collector 3. Emitter E F G I 3-Lead SOT-89 Plastic Surface Mounted Package CYStek Package Code: M3 *: Typical DIM A B C D E Inches Min. Max. 0.1732 0.1811 0.1594 0.1673 0.0591 0.0663 0.0945 0.1024 0.01417 0.0201 Millimeters Min. Max. 4.40 4.60 4.05 4.25 1.50 1.70 2.40 2.60 0.36 0.51 DIM F G H I Inches Min. Max. 0.0583 0.0598 0.1165 0.1197 0.0551 0.0630 0.0138 0.0161 Millimeters Min. Max. 1.48 1.527 2.96 3.04 1.40 1.60 0.35 0.41 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: * Lead: 42 Alloy ; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTB1580M3 CYStek Product Specification |
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